Journal
PROCEEDINGS OF THE IEEE
Volume 104, Issue 10, Pages 1796-1830Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2016.2590142
Keywords
Magnetic tunnel junctions (MTJs); MRAM; spin electronics; spin-transfer torque (STT); spintronics; STT-MRAM; thermally assisted MRAM; toggle; tunnel magnetoresistance
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In this paper, a review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on spin-transfer torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed.
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