Journal
PHYSICS LETTERS A
Volume 380, Issue 7-8, Pages 970-972Publisher
ELSEVIER
DOI: 10.1016/j.physleta.2015.12.038
Keywords
Band offset; X-ray photoelectron spectroscopy; ZnO/Lu2O3 heterojunction
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Funding
- National Natural Science Foundation of China [51302244, 51172204, 91333203]
- Program for Innovative Research Team in University of Ministry of Education of China [IRT13037]
- Fundamental Research Funds for the Central Universities [2015FZA4007]
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Lu2O3 was used as the buffer layer of the epitaxy of ZnO film on Si substrate by plasma-assisted molecular beam epitaxy. X-ray photoelectron spectroscopy was used to determine the band alignment at ZnO/Lu2O3 interface. The conduction band offset (CBO) and valence band offset (VBO) of the ZnO/Lu2O3 heterojunction are calculated to be 1.77 eV and 0.66 eV, respectively, with a type-I band alignment. And the ratio of CBO and VBO (Delta E-c/Delta E-v) is estimated to be about 2.68. The large. Delta E-v and Delta E-c reveal that Lu2O3 is an ideal barrier layer in Si-based ZnO optoelectronic devices. (C) 2016 Elsevier B.V. All rights reserved.
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