4.8 Article

Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

Journal

PHYSICAL REVIEW LETTERS
Volume 117, Issue 26, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.117.267201

Keywords

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Funding

  1. U.S. DOE, Office of Basic Energy Science, Division of Materials Science and Engineering
  2. Office of Basic Energy Sciences, U.S. DOE [DE-AC02-05CH11231, DE-AC02-76SF00515]
  3. U.S. DOE, Office of Basic Energy Science, Materials Science and Engineering Division
  4. NRF, Korea through the SRC center for Topological Matter [2011-0030787]
  5. National Research Foundation of Korea [2016-PAL] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.

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