Journal
PHYSICAL REVIEW LETTERS
Volume 116, Issue 17, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.116.176803
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Funding
- State Key Program for Basic Research of China [2014CB921103, 2015CB921203, 2013CB922103]
- National Natural Science Foundation of China [11374140, 11374149, 51032003, 50632030, 1097 4083, 51002074, 10904092, 51472112]
- New Century Excellent Talents in University [NCET-09-0451]
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We report an atomic-scale characterization of ZrTe5 by using scanning tunneling microscopy. We observe a bulk band gap of similar to 80 meV with topological edge states at the step edge and, thus, demonstrate that ZrTe5 is a two-dimensional topological insulator. We also find that an applied magnetic field induces an energetic splitting of the topological edge states, which can be attributed to a strong link between the topological edge states and bulk topology. The relatively large band gap makes ZrTe5 a potential candidate for future fundamental studies and device applications.
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