Journal
PHYSICAL REVIEW LETTERS
Volume 117, Issue 20, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.117.207204
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Funding
- National Science Foundation [DMR-1308751]
- Nebraska Materials Research Science and Engineering Center [DMR-1420645]
- U.S. Department of Energy Early Career Award [DE-SC0014189]
- EPSRC CCP9 Flagship Project [EP/M011631/1]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1308751] Funding Source: National Science Foundation
- Engineering and Physical Sciences Research Council [EP/M011631/1] Funding Source: researchfish
- EPSRC [EP/M011631/1] Funding Source: UKRI
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Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at metallic interfaces is usually quantified by matching the magnetoresistance data for multilayers to the Valet-Fert model, while treating each interface as a fictitious bulk layer whose thickness is delta times the spin-diffusion length. By employing the properly generalized circuit theory and the scattering matrix approaches, we derive the relation of the parameter d to the spin-flip transmission and reflection probabilities at an individual interface. It is found that d is proportional to the square root of the probability of spin-flip scattering. We calculate the spin-flip scattering probabilities for flat and rough Cu/Pd interfaces using the Landauer-Buttiker method based on the fir-principles electronic structure and find d to be in reasonable agreement with experiment.
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