Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 18, Issue 45, Pages 31175-31183Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6cp06147h
Keywords
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Funding
- 973 program [2013CB632402]
- NSFC [21433007, 51372190, 21573170, 51272199, 51320105001]
- Natural Science Foundation of Hubei Province [2015CFA001]
- Fundamental Research Funds for the Central Universities [WUT: 2015-III-034]
- Innovative Research Funds of SKLWUT [2015-ZD-1]
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Constructing a TiO2 based heterostructure is a very effective strategy for enhancing photocatalytic performance. The details of the electronic structure, interfacial interaction, and photogenerated carrier separation are important for explaining the photocatalytic properties of a heterostructure. Herein, the density of states, charge distribution, and the band offset of the monolayer g-C3N4/TiO2 heterojunction are systematically investigated through the hybrid DFT method. Results indicated that the valence band offset and the conduction band offset of the g-C3N4/TiO2 heterostructure were 0.40 and 0.18 eV, respectively. Interfacial interaction made the TiO2 surface with negative charge, whereas the g-C3N4 surface with positive charge, which led to the formation of a built-in electric field at the interface. Under illumination, the built-in electric field accelerates the transfer of photoexcited electrons in the CB of TiO2 into the VB of g-C3N4, thus resulting in the photoexcited electrons and holes naturally accumulating in the CB of g-C3N4 and the VB of TiO2, respectively. The photoexcited electrons and holes gathering in different surface regions efficiently prolonged the lifetime of photogenerated carriers. Meanwhile, electrons in the CB of g-C3N4 and holes in the VB of TiO2 had a stronger redox ability. Therefore, g-C3N4/TiO2 is a direct Z-scheme photocatalyst, and the Z-scheme heterostructure mechanism can well explain the improved photocatalytic activity of the g-C3N4/TiO2 heterostructure.
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