Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 18, Issue 16, Pages 11341-11347Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6cp00007j
Keywords
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Funding
- National Science Foundation of China [61204127, 61204132]
- Doctoral Fund of Ministry of Education of China [20132301110001]
- Natural Science Foundation of Heilongjiang Province, China [A2015010]
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Nonvolatile memory devices based on active layers of poly(vinyl alcohol) (PVA) + graphene oxide (GO) hybrid composites have been fabricated. The performance of the ITO/PVA + GO/Al device was compared with that of the ITO/PVA/Al device. The ITO/PVA + GO/Al device showed excellent performance compared to the ITO/PVA/Al device (an ON/OFF resistance ratio of 1.2 x 10(2) at 1 V, V-SET similar to -1.45 V and V-RESET similar to 3.6 V), with a higher ON/OFF resistance ratio of 3 x 10(4) at 1 V and lower operating voltages of V-SET similar to -0.75 V and V-RESET similar to 3.0 V. Furthermore, endurance performance and write-read-erase-reread (WRER) cycle tests manifest that the presence of GO in ITO/PVA + GO/Al devices makes them have better stability and repeatability. The results show that the performance of hybrid devices can be effectively enhanced by the introduction of GO into the PVA matrix.
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