4.6 Article

Defect-engineered graphene chemical sensors with ultrahigh sensitivity

Journal

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 18, Issue 21, Pages 14198-14204

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c5cp04422g

Keywords

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Funding

  1. LG Innotek-Korea University Nano-Photonics Program
  2. Radiation Technology Research and Development program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2013M2A2A6043608]
  3. [2014R1A1A1005303]
  4. National Research Foundation of Korea [2013M2A2A6043608, 2014R1A1A1005303, 21A20131812182] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We report defect-engineered graphene chemical sensors with ultrahigh sensitivity (e.g., 33% improvement in NO2 sensing and 614% improvement in NH3 sensing). A conventional reactive ion etching system was used to introduce the defects in a controlled manner. The sensitivity of graphene-based chemical sensors increased with increasing defect density until the vacancy-dominant region was reached. In addition, the mechanism of gas sensing was systematically investigated via experiments and density functional theory calculations, which indicated that the vacancy defect is a major contributing factor to the enhanced sensitivity. This study revealed that defect engineering in graphene has significant potential for fabricating ultra-sensitive graphene chemical sensors.

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