Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 18, Issue 24, Pages 16367-16376Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6cp01866a
Keywords
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Funding
- National Natural Science Foundation of China [11274016/11474012]
- National Basic Research Program of China [2013CB932604/2012CB619304]
- Key Laboratory for Intelligent NanoMaterials and Devices of the Ministry of Education [INMD-2016M03]
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Semiconducting single-layer (SL) and few-layer MoS2 have a flat surface, free of dangling bonds. Using density functional theory coupled with non-equilibrium Green's function method, we investigate the spin-polarized transport properties of Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions with MoS2 layer numbers of N = 1, 3, and 5. Well-defined interfaces are formed between MoS2 and metal electrodes. The junctions with a SL MoS2 spacer are almost metallic owing to the strong coupling between MoS2 and the ferromagnets, while those are tunneling with a few layer MoS2 spacer. Both large magnetoresistance and tunneling magnetoresistance are found when fcc or hcp Co is used as an electrode. Therefore, flat single- and few-layer MoS2 can serve as an effective nonmagnetic spacer in a magnetoresistance or tunneling magnetoresistance device with a well-defined interface.
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