Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 10, Issue 5, Pages 363-375Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201510440
Keywords
Cu(In,Ga)Se-2; grain boundaries; twin boundaries; stacking faults; dislocations
Funding
- Helmholtz Virtual Institute [VH-VI-520]
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The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)(2) thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)(2) thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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