Exciton-phonon interactions in the Cs3Bi2I9 crystal structure revealed by Raman spectroscopic studies

The enhancement of the Raman scattering in Cs3Bi2I9 is evaluated by the ratio I-T/I-300K between the relative intensities of the Raman line peaked at 146cm(-1), when the spectra are recorded in the temperature range of 88-300K, as a signature of exciton-phonon interactions. In the resonant and nonresonant conditions, excitation wavelengths 476, 561, and 660nm, respectively, are used in order to overlap with great accuracy the bands disclosed by diffuse reflection, photoconductivity (PC), photoluminescence (PL), and photoluminescence excitation (PLE) spectra. Based on the experimental analyses, the strength of exciton-phonon interaction is dependent on the defects in the crystal and the type-range interaction of the excitations in an independent Bi2I93- cluster. The noticeable PL band, attributed to excitons trapped on different stacking faults, manifests some defects in crystal that diminish the movement of excitons. This effect significantly decreases the overlaps of excitons with the phonons, resulting in a reduced exciton-phonon coupling.