Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 253, Issue 12, Pages 2478-2480Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.201600234
Keywords
2D materials; cationic diffusion barrier; graded bandgap; hexagonal boron nitride (h-BN); perovskites
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Funding
- Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the U.S. Department of Energy [DE-AC02-05CH11231, KC2207]
- National Science Foundation [1542741]
- Office of Naval Research (MURI) [N0014-16-1-2229]
- NSF Graduate Fellowship Program
- Directorate For Engineering
- Emerging Frontiers & Multidisciplinary Activities [1542741] Funding Source: National Science Foundation
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We demonstrate a new technique to produce graded bandgap organohalide perovskite heterostructures using hexagonal boron nitride (h-BN) as a cationic separator. With this technique, we successfully deposit CH3NH3PbI3-xBrx on CH3NH3SnI3 without cation mixing.
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