Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 213, Issue 4, Pages 893-897Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201532570
Keywords
AlGaN; GaN; high electron mobility transistors; nanocrystalline materials; self-heating
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Top-side integration of nanocrystalline diamond films in the fabrication sequence of AlGaN/GaN high electron mobility transistors is demonstrated. Reliable oxygen plasma etching of the diamond capping layer, required for a diamond-before-gate process, was implemented by using a sacrificial SiN dummy gate. Hall characterization showed minimal (similar to 6%) reduction in sheet carrier density and commensurate increase in sheet resistance, while maintaining mobility and on-state drain current density. Off-state drain current and threshold voltage were increased, likely by fluorination of the AlGaN surface after removal of the sacrificial gate, even though a 20 nm thick Al2O3 layer was used as a SF6-plasma etch stop. Pulsed I-DS and on-resistance were improved, indicating that a 10 nm SiN/500 nm NCD could offer improved AlGaN surface passivation compared to a more conventional 100 nm thick PECVD SiN film. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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