Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 80, Issue -, Pages 142-148Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physe.2016.01.026
Keywords
Graphene; Electronic properties; Doping; Semiconductor; Spintronics; First-principles
Funding
- National Science and Technology Major Project of the Ministry of Science and Technology of China [2012ZX0401031]
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The electronic structures and magnetic behaviors of graphene with 5d series transition metal atom substitutions are investigated by performing first-principles calculations. All the impurities are tightly bonded to single vacancy in a graphene sheet. The substitutions of La and Ta lead to Fermi level shifting to valence and conduction band, respectively. Both the two substitutions result in metallic properties. Moreover, the Hf, Os and Pt-substituted systems exhibit semiconductor properties, while the Re and Ir-substituted ones exhibit robust half-metallic properties. Interestingly, W-substituted system shows dilute magnetic semiconductor property. On the other hand, the substitution of Ta, W, Re and Ir induce 0.86 mu(B), 2 mu(B), 1 mu(B) and 0.99 mu(B) magnetic moment, respectively. Our studies demonstrate that the 5d series transition metal substituted graphene have potential applications in nanoelectronics, spintronics and magnetic storage devices. (C) 2016 Elsevier B.V. All rights reserved.
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