4.4 Article

Connecting electronic entropy to empirically accessible electronic properties in high temperature systems

Journal

PHILOSOPHICAL MAGAZINE
Volume 96, Issue 29, Pages 3041-3053

Publisher

TAYLOR & FRANCIS LTD
DOI: 10.1080/14786435.2016.1216657

Keywords

Entropy; electronic entropy; thermopower; molten semiconductor

Funding

  1. AFOSR [FA9550-15-1-0046]

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A quantitative theoretical model connecting the thermopower and electronic entropy of molten systems is proposed, the validity of which is tested for semiconductors and metallic materials. The model accurately provides the entropy of mixing for molten semiconductors, as shown for the representative system Te-Tl. Predictions of the electronic entropy of fusion for compounds are in agreement with available data and offer a novel means to identify the correct electrical conductivity model when Hall measurements are not available. Electronic entropy for molten semiconductor and metallic systems is shown to reflect order in the molten and solid state. The model proves accurate at predicting the electronic state entropy contribution to the electronic entropy of mixing.

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