Journal
ORGANIC ELECTRONICS
Volume 28, Issue -, Pages 294-298Publisher
ELSEVIER
DOI: 10.1016/j.orgel.2015.11.003
Keywords
Organic thin-film transistor memory; Hydrophobized DNA complex; Thermally stimulated depolarization current; Ferroelectric material
Funding
- MEXT, Japan [20350085]
- Futaba Electronics Memorial Research Foundation
- Grants-in-Aid for Scientific Research [26110503, 20350085, 16H00955] Funding Source: KAKEN
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A nonvolatile memory based on an organic thin-film transistor (OTFT) with a biopolymer of DNA-cetyltrimethylammonium chloride (DNA-CTMA) acting as the gate dielectric layer was fabricated. The transfer characteristics of the device prepared by both DNA alone and DNA-CTMA showed a very large and stable hysteresis. In order to analyze the memory mechanism, the temperature dependence of the transfer characteristics, electric conductivity, differential scanning calorimetry (DSC), thermally stimulated depolarization current (TSDC) as well as the dielectric property of the DNA-CTMA film have been investigated. As a result, the quasi-ferroelectric polarization originating from the alignment of the intrinsic dipole moment inside the DNA-CTMA complex was identified as the main source of hysteresis in the lower temperature region. (C) 2015 Elsevier B.V. All rights reserved.
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