Journal
ORGANIC ELECTRONICS
Volume 32, Issue -, Pages 7-14Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2016.02.002
Keywords
Resistive switching; Multilevel memory; Carbon nanotubes; Rewritable; Charge trap
Funding
- National Science Foundation of China [61204127, 21372067]
- Ministry of Education of China [20132301110001]
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A novel multilevel resistive switching was observed in epoxy methacrylate resin (EMAR) and carbon nanotubes (CNTs) composite films fabricated by spin coating method. The fabricated devices demonstrated the rewritable nonvolatile memory characteristics. More significantly, the memory device based on EMAR+CNTs composite exhibits multilevel stable conductivity states with stable intermediate resistance states in response to the applied voltage. By setting different compliance current and content of CNTs in composite film, the multilevel ON-states and even the multilevel OFF-states have been observed in our memory device. As fabricated devices exhibited multilevel resistive switching with stable resistance ratio between different resistance states having good data retention and endurance characteristics. It offers a novel design strategy for solution processable multilevel data storage. (C) 2016 Elsevier B.V. All rights reserved.
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