Journal
ORGANIC ELECTRONICS
Volume 31, Issue -, Pages 104-110Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2016.01.015
Keywords
Organic nonvolatile memory device; Charge trapping; n-Channel polymer transistor; Switching phenomenon; Polymer end capping
Funding
- NSF [DMR-1409687]
- Boeing-Martin Professorship
- National Research Foundation of Korea - Korea Government [NRF-2014M3A7B4051749, NRF-2014R1A1A2058289]
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Charge trapping is an undesirable phenomenon and a common challenge in the operation of n-channel organic field-effect transistors. Herein, we exploit charge trapping in an n-type semiconducting poly (naphthalene diimide-alt-biselenophene) (PNDIBS) as the key operational mechanism to develop high performance, nonvolatile, electronic memory devices. The PNDIBS-based field-effect transistor memory devices were programmed at 60 V and they showed excellent charge-trapping and de-trapping characteristics, which could be cycled more than 200 times with a current ratio of 10(3) between the two binary states. Programmed data could be retained for 10(3) s with a memory window of 28 V. This is a record performance for n-channel organic transistor with inherent charge-trapping capability without using external charge trapping agents. However, the memory device performance was greatly reduced, as expected, when the n-type polymer semiconductor was end-capped with phenyl groups to reduce the trap density. These results show that the trap density of n-type semiconducting polymers could be engineered to control the inherent charge-trapping capability and device performance for developing high-performance low-cost memory devices. (c) 2016 Elsevier B.V. All rights reserved.
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