Memory behavior of multi-bit resistive switching based on multiwalled carbon nanotubes

Multiwalled carbon nanotube (MWCNT) displays peculiar electrical behavior, with its nano-configuration consisting of exceptional graphene flakes. As for MWCNTs blended into polymethyl methacrylate (PMMA), sandwiched Ni/MWCNTs(2 wt%):PMMA/ITO was manufactured to investigate into the multi-bit resistive switching regarding the turn-on compliance current as well as the thickness of the active layer. It bears ternary write-once read-many-times (WORM) memory, whose current proportionality between ON-state and OFF-state can exceed 10(7). Moreover, the memory performance, covering the long-term retention (> 10(6) s), better endurance (> 10(12) cycles) and device-to-device profiles, confirms the excellent ternary memory of MWCNTs: PMMA. Concentration on multi-bit resistive switching in respect of MWCNTs underlies performance enhancement, higher integration and advanced architecture. (C) 2016 Elsevier B.V. All rights reserved.