Journal
OPTICS LETTERS
Volume 41, Issue 15, Pages 3463-3466Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.41.003463
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Funding
- National Natural Science Foundation of China (NSFC) [61404017, 61520106012]
- Natural Science Foundation of Chongqing [cstc2015jcyjA1055, cstc2015jcyjA90007]
- Fundamental Research Funds for the Central Universities [106112015CDJXY120001, 106112015CDJZR125511]
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A significant enhancement of light extraction efficiency from InGaN light-emitting diodes (LEDs) with microhole arrays and roughened ZnO was experimentally demonstrated. The roughened ZnO was fabricated using an Ar and H-2 plasma treatment of ZnO films pre-coated on a p-GaN layer. When followed by a femtosecond laser direct writing technique, a periodic array of microholes could be added to the surface. The diameter of the microhole was varied by changing the output power of the femtosecond laser. Compared to conventional LEDs on the same wafer, the output power of LEDs with roughened ZnOs and a microhole (diameter of 2 mu m) array was increased by 58.4% when operated with an injection current of 220 mA. Moreover, it was found that LEDs fabricated with roughened ZnO and the microhole array had similar current-voltage (I-V) characteristics to those of conventional LEDs and no degrading effect was observed. (C) 2016 Optical Society of America
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