Journal
OPTICS LETTERS
Volume 41, Issue 24, Pages 5700-5703Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.41.005700
Keywords
-
Categories
Funding
- Office of Naval Research (ONR)
- U.S. Department of Energy (DOE)
Ask authors/readers for more resources
Compact electro-optical modulators are demonstrated on thin films of lithium niobate on silicon operating up to 50 GHz. The half-wave voltage length product of the high-performance devices is 3.1 V.cm at DC and less than 6.5 V.cm up to 50 GHz. The 3 dB electrical bandwidth is 33 GHz, with an 18 dB extinction ratio. The third-order intermodulation distortion spurious free dynamic range is 97.3 dBHz(2/3) at 1 GHz and 92.6 dBHz(2/3) at 10 GHz. The performance demonstrated by the thin-film modulators is on par with conventional lithium niobate modulators but with lower drive voltages, smaller device footprints, and potential compatibility for integration with large-scale silicon photonics. (C) 2016 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available