4.6 Article

Optically injected InAs/GaAs quantum dot laser for tunable photonic microwave generation

Journal

OPTICS LETTERS
Volume 41, Issue 6, Pages 1153-1156

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OL.41.001153

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Funding

  1. European Office of Aerospace Research and Development [FA9550-15-1-0104]
  2. National Natural Science Foundation of China (NSFC) [61308002]
  3. Research Grant Council of Hong Kong, China [CityU 11201014]

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We present an experimental investigation on the period-one dynamics of an optically injected InAs/GaAs quantum dot laser as a photonic microwave source. It is shown that the microwave frequency of the quantum dot laser's period-one oscillation is continuously tunable through the adjustment of the frequency detuning. The microwave power is enhanced by increasing the injection strength providing that the operation is away from the Hopf bifurcation, whereas the second-harmonic distortion of the electrical signal is well reduced by increasing the detuning frequency. Both strong optical injection and high detuning frequency are favorable for obtaining a single sideband optical signal. In addition, particular period-one oscillation points of low sensitivity to the frequency detuning are found close to the Hopf bifurcation line. (C) 2016 Optical Society of America

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