Journal
OPTICS EXPRESS
Volume 24, Issue 5, Pages 4519-4531Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.24.004519
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Funding
- National Science Foundation (NSF) [EPS-1003970]
- Arktonics, LLC (Air Force SBIR) [FA9550-14-C-0044]
- DARPA [W911NF-13-1-0196]
- AFOSR [FA9550-14-1-0196]
- AOARD [FA2386-14-1-4073]
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Normal-incidence Ge1-xSnx photodiode detectors with Sn compositions of 7 and 10% have been demonstrated. Such detectors were based on Ge/Ge1-xSnx/Ge double heterostructures grown directly on a Si substrate via a chemical vapor deposition system. A temperature-dependence study of these detectors was conducted using both electrical and optical characterizations from 300 to 77 K. Spectral response up to 2.6 mu m was achieved for a 10% Sn device at room temperature. The peak responsivity and specific detectivity (D*) were measured to be 0.3 A/W and 4 x 109 cmHz(1/2)W(-1) at 1.55 mu m, respectively. The spectral D* of a 7% Sn device at 77 K was only one order-of-magnitude lower than that of an extended-InGaAs photodiode operating in the same wavelength range, indicating the promising future of GeSn-based photodetectors. (C) 2016 Optical Society of America
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