Journal
OPTICS EXPRESS
Volume 24, Issue 23, Pages 26986-26997Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.24.026986
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Funding
- Engineering and Physical Sciences Research Council programme grant COTS [EP/J017671/1, EP/I026657/1, EP/J002356/1, EP/L504993/1]
- Royal Society and Wolfson Foundation (AGD and EHL)
- EPSRC [EP/J002356/1, EP/M01598X/1, EP/I026657/1, EP/H007881/1, EP/F029543/1, EP/J017671/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H007881/1, GR/S51417/01, 1369364, EP/J002356/1, GR/S51424/01, EP/M01598X/1, EP/J017671/1, 1366039, EP/F029543/1, EP/I026657/1] Funding Source: researchfish
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We report on large-area photoconductive terahertz (THz) emitters with a low-temperature-grown GaAs (LT-GaAs) active layer fabricated on quartz substrates using a lift-off transfer process. These devices are compared to the same LT-GaAs emitters when fabricated on the growth substrate. We find that the transferred devices show higher optical-to-THz conversion efficiencies and significantly larger breakdown fields, which we attribute to reduced parasitic current in the substrate. Through these improvements, we demonstrate a factor of similar to 8 increase in emitted THz field strength at the maximum operating voltage. In addition we find improved performance when these devices are used for photoconductive detection, which we explain through a combination of reduced parasitic substrate currents and reduced space-charge build-up in the device. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
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