Journal
OPTICS EXPRESS
Volume 24, Issue 21, Pages 23755-23764Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.24.023755
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Funding
- National Natural Science Foundation of China [51472064, 51372056, 61308052, 51672057]
- Fundamental Research Funds for the Central Universities [HIT.BRETIII.201220, HIT.NSRIF.2012045, HIT.ICRST.2010008]
- Program for Innovation Research of Science in Harbin Institute of Technology (PIRS of HIT) [201616]
- International Science & Technology Cooperation Program of China [2012DFR50020]
- Program for New Century Excellent Talents in University [NCET-13-0174]
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In this paper, we report a sensitive lateral photovoltaic effect (LPE) in Fe3O4/3C-SiC Schottky junctions with a fast relaxation time at near-ultraviolet wavelengths. The rectifying behavior suggests that the large build-in electric field was formed in the Schottky junctions. This device has excellent position sensitivity as high as 67.8 mV mm(-1) illuminated by a 405 nm laser. The optical relaxation time of the LPE is about 30 mu s. The fast relaxation and high positional sensitivity of the LPE make the Fe3O4/3C-SiC junction a promising candidate for a wide range of ultraviolet/near-ultraviolet optoelectronic applications. (C) 2016 Optical Society of America
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