Journal
OPTICS EXPRESS
Volume 24, Issue 13, Pages 13824-13831Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.24.013824
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Funding
- National Natural Science Foundation of China [61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, 61321063]
- One Hundred Person Project of the Chinese Academy of Sciences
- Basic Research Project of Jiangsu Province [BK20130362]
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A series of samples with varying growth pressure are grown and their optical and structural properties are investigated. It is found that the residual carbon concentration decreases when the reactor pressure increases from 80 to 450 Torr during the InGaN/GaN multiple quantum well growth. It results in an enhanced peak intensity of electroluminescence because carbon impurities can induce deep energy levels and act as non-radiative recombination centers in InGaN layers. (C) 2016 Optical Society of America
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