Journal
OPTICS EXPRESS
Volume 24, Issue 16, Pages 18799-18806Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.24.018799
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Funding
- Investment for the Future program (EquipEx) (EXTRA) [ANR-11-EQPX-0016]
- Agence nationale de la recherche (ANR) [Delta ANR-11-NANO-020]
- Fonds europeen de developpement economique regional (FEDER) [47851, 49793]
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We report low threshold InAs/AlSb quantum cascade lasers emitting near 15 mu m. The devices are based on a vertical design similar to those employed previously in far infrared InAs-based QCLs, whereas the doping level of the active core is considerably decreased. The lasers exhibit a threshold current density as low as 730 A/cm(2) in pulsed mode at room temperature and can operate in this regime up to 410K. The continuous wave regime of operation has been achieved in these devices at temperatures up to 20 degrees C. The cw regime is demonstrated for InAs-based QCLs for the first time at room temperature. (C) 2016 Optical Society of America
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