4.6 Article

Optical and electronic properties of some semiconductors from energy gaps

Journal

OPTICAL MATERIALS
Volume 53, Issue -, Pages 123-133

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.optmat.2016.01.012

Keywords

Refractive index; Energy gap; Ionicity; Electronic polarisability; Dielectric constant

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II-VI and III-IV tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap. The proposed empirical relation has also been used to calculate the electronic polarisability of some ternary compounds. (C) 2016 Elsevier B.V. All rights reserved.

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