Journal
CHEMISTRY OF MATERIALS
Volume 27, Issue 3, Pages 983-989Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cm504268j
Keywords
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Funding
- National Natural Science Foundation of China (NSFC) [61172001, 21373068, 21303030]
- National key Basic Research Program of China (973 Program) [2013CB632900]
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Graphene-like layered semiconductors are a new class of materials for next generation electronic and optoelectronic devices due to their unique electrical and optical properties. A pn junction is an elementary building block for electronics and optoelectronics devices. Here, we demonstrate the fabrication of a lateral pn heterojunction diode of a thin-film InSe/CuInSe2 nanosheet by simple solid-state reaction. We discover that InSe nanosheets can be easily transformed into CuInSe2 thin film by reacting with elemental copper at a temperature of 300 degrees C. Photodetectors and photovoltaic devices based on this lateral heterojunction pn diode show a large photoresponsivity of 4.2 A W-1 and a relatively high light-power conversion efficiency of 3.5%, respectively. This work is a giant step forward in practical applications of two-dimensional materials for next generation optoelectronic devices.
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