Journal
CHEMISTRY OF MATERIALS
Volume 27, Issue 7, Pages 2488-2494Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cm504658h
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Funding
- Welch Foundation
- AFOSR MURI
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1360863] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1358975] Funding Source: National Science Foundation
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Single crystals of Lu3T4Ge13-x (T = Co, Rh, Os) and Y3T4Ge13-x (T = Ir, Rh, Os) have been grown using the self-flux method and found to adopt the Yb3Rh4Sn13-x structure type. Magnetization and specific heat measurements confirm that all compounds are bulk superconductors, some with reduced superconducting gaps determined from specific heat suggesting multiband superconductivity. However, an unusual increase of the electrical resistivity and a decrease of the charge carrier density on cooling in the normal state are observed for all six compounds even though density functional periodic calculations reveal a metallic ground state. We empirically show that large atomic displacement parameter ratios in the R3T4Ge13-x compounds are correlated with the semiconductor-like behavior, which resolves the contradiction between the experiment and the calculations.
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