Journal
NUCLEAR SCIENCE AND TECHNIQUES
Volume 27, Issue 6, Pages -Publisher
SPRINGER SINGAPORE PTE LTD
DOI: 10.1007/s41365-016-0149-8
Keywords
Dosimetry; Gamma radiation; Cs-137; Active and passive mode; P-channel MOSFET; Threshold voltage
Categories
Ask authors/readers for more resources
This article is about the absorbed-dose-dependent threshold voltage shift of the MOSFET transistors. Performance of the MOSFETs has been tested in different gate voltages. Sensitivity of the transistors for 662 keV gamma ray is studied in 1-5 Gy dose range. It was found that for transistors irradiated in biased mode, significant changes in the threshold voltage occurred, and the sensitivity to gamma rays increased with the bias voltage.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
