Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Volume 830, Issue -, Pages 243-250Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nima.2016.05.124
Keywords
CdZnTe detectors; Boron oxide encapsulated Vertical Bridgman technique; Traveling heater method, electrical properties; Interfacial layer-thermionic-diffusion
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Funding
- Italian Ministry for Education, University and Research (MIUR) under PRIN Project [2012WM9MEP]
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In this work we report on the results of electrical characterization of new CdZnTe detectors grown by the Boron oxide encapsulated Vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with gold electroless contacts, have different thicknesses (1 and 2.5 mm) and the same electrode layout, characterized by a central anode surrounded by a guard-ring electrode. Investigations on the charge transport mechanisms and the electrical contact properties, through the modeling of the measured current voltage (I V) curves, were performed. Generally, the detectors are characterized by low leakage currents at high bias voltages even at room temperature: 34 nA/cm(2) (T=25 degrees C) at 10,000 V/cm, making them very attractive for high flux X-ray measurements, where high bias voltage operation is required. The Au/CdZnTe barrier heights of the devices were estimated by using the interfacial layer-thermionic-diffusion (ITD) model in the reverse bias voltage range. Comparisons with CdZnTe detectors, grown by Traveling Heater Method (THM) and characterized by the same electrode layout, deposition technique and resistivity, were also performed. (C) 2016 Elsevier B.V. All rights reserved.
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