Effect of Oxygen Annealing Atmosphere on Structural, Electrical and Energy Storage Properties of Bi0.5Na0.5TiO3 Polycrystalline Thin Film

Bismuth sodium titanate (BNT) thin films were deposited on Pt/SiN substrates by Sol-Gel spin coating technique and annealed under O-2 atmosphere. The microstructural, structural, and electrical properties of the obtained film were investigated. Electron microscopy scans and atomic force microscopy micrographs were used to analyze the microstructure of the films. Furthermore, energy-dispersive X-ray spectroscopy (EDX) analysis revealed a Na-deficient composition for the obtained film. X-ray diffraction and Raman spectroscopy allowed the identification of a pure perovskite BNT phase. Dielectric, ferroelectric, and leakage current measurements revealed good frequency stability of the dielectric constant and dielectric losses for BNT thin film. The results are discussed in terms of Na deficiency effects on the defect structure of BNT. Further, the film showed attractive electrostatic energy storage properties with energy density that exceeds 1.04 J/cm(3) under E = 630 kV/cm.

Automated summary

In this study, Bismuth sodium titanate (BNT) thin films were successfully deposited using the Sol-Gel spin coating technique. The microstructural, structural, and electrical properties of the obtained film were investigated. The results showed good frequency stability of the dielectric constant and attractive electrostatic energy storage properties.