Gate-mesa trench enables enhanced β-Ga2O3 MOSFET with higher power figure of merit

In this article, a gate-mesa trench (GMT) beta-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) device with enhanced performance and breakdown voltage improvement is proposed. Compared with the gate-field plate trench (GFPT), the breakdown voltage and power figure of merit (PFOM) of theGMTdevice are 2566 Vand 680.53MWcm(-2) respectively, which are 1.56 times and 2.25 times higher than those of the GFPT, demonstrating excellent device performance. When the etch depth is 200 nm, the specific on-resistance of the GFPT and theGMTis 8.84m Omega cm(-2) and 9.76m Omega cm(-2), respectively, with the peak transconductance of the GFPT being 61.56 mSmm(-1) when the epitaxial layer doping concentration is 3x10(17) cm-3, which is 1.22 times that of the GMT. The high dielectric constant HfO2 dielectric can significantly improve thePFOMof the device, while the gate oxide Al2O3 drifts the threshold voltage to the right. This article presents a novel approach for designing high-performance enhanced beta-Ga2O3 MOSFETs.

Automated summary

This article proposes a gate-mesa trench (GMT) beta-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) device with enhanced performance and improved breakdown voltage. Compared to the gate-field plate trench (GFPT), the GMT device shows higher breakdown voltage and power figure of merit (PFOM), demonstrating excellent device performance. The use of high dielectric constant HfO2 dielectric and gate oxide Al2O3 is found to significantly improve the performance of the device.