Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes

In this work, W/& beta;-Ga2O3 Schottky barrier diodes, prepared using a confined magnetic field-based sputtering method, were analyzed at different operation temperatures. Firstly, Schottky barrier height increased with increasing temperature from 100 to 300 K and reached 1.03 eV at room temperature. The ideality factor decreased with increasing temperature and it was higher than 2 at 100 K. This apparent high value was related to the tunneling effect. Secondly, the series and on-resistances decreased with increasing operation temperature. Finally, the interfacial dislocation was extracted from the tunneling current. A high dislocation density was found, which indicates the domination of tunneling through dislocation in the transport mechanism. These findings are evidently helpful in designing better performance devices.

Automated summary

W/β-Ga2O3 Schottky barrier diodes prepared using a magnetic field-based sputtering method were studied at different temperatures. The Schottky barrier height increased with temperature and reached 1.03 eV at room temperature. The ideality factor decreased with temperature and was higher than 2 at 100K due to the tunneling effect. The series and on-resistances decreased with increasing temperature. High interfacial dislocation density was observed, indicating the dominance of tunneling through dislocation in the transport mechanism. These findings are helpful for designing better performance devices.