Controlling Resistive Switching Modes of Ferrocene-Containing Polyelectrolyte Layer-by-Layer Nanofilms

Wepropose controlling ion diffusion and electron hopping in apolymer-based resistive switching device consisting of ferrocene (Fc)-containingpolyelectrolyte nanofilms as a switching layer and PEDOT:PSS filmsas a top electrode. The switching layer was fabricated onto ITO electrodesusing the layer-by-layer (LbL) method of Fc-containing branched polyethyleneimine(bPEI-Fc) and poly(styrene sulfonate) (PSS). Current-voltagecharacteristics of the ITO|(bPEI-Fc/PSS)( n )|PEDOT:PSS device with a simple sandwich structure exhibited resistiveswitching and short-circuited behavior; the characteristics dependedon the Fc contents and relative humidity. Cyclic voltammetry and electrochemicalimpedance spectroscopy measurements indicated that the interdistancebetween nearby Fc units and the polymer segment motion coupled withwater penetration govern the current-voltage characteristics.This study elucidates unique features of polymer-based resistive switchingdevices, paving the way for neuromorphic and wearable electronicsapplications.

Automated summary

This study proposes a method of controlling ion diffusion and electron hopping in a polymer-based resistive switching device. The device consists of ferrocene-containing polyelectrolyte nanofilms as a switching layer and PEDOT:PSS films as a top electrode. The characteristics of resistive switching and short-circuited behavior in the device depend on the ferrocene contents and relative humidity. This study elucidates the unique features of polymer-based resistive switching devices, which can pave the way for neuromorphic and wearable electronics applications.