☆ 4.7 Article

Unveiling dopant concentration in boron doped Si ultrathin film: Enhanced analysis using time-dependent second harmonic generation

SURFACES AND INTERFACES (2023)

Related references

Note: Only part of the references are listed.

Article Chemistry, Analytical

Competition between oxygen and water molecules on SiO2/P-doped Si surface: The electrical dipole evolution on water/oxygen-adsorbed oxide surface

Yu-Hsiang Huang et al.

Summary: The performance of gas sensors in humid environments is influenced by the interaction between water and oxygen molecules. This study investigates the competitive adsorption behaviors of oxygen and water vapor using the charge trapping characteristic and observing the evolution of second harmonic generation. By analyzing the trapping time constant, a dynamic model is proposed to explain how water molecules weaken oxygen adsorption and form a water adsorption layer. The results show that the electric field created by charge trapping can align water molecules and enhance the second harmonic generation intensity. This research provides insights into solving water-sensor interaction problems in gas sensors by analyzing the net surface dipole change caused by adsorption-desorption on the SiO2 surface.

SENSORS AND ACTUATORS B-CHEMICAL (2023)

Add to Collection

Article Engineering, Electrical & Electronic

Boron-Doped Diamond MOSFETs With High Output Current and Extrinsic Transconductance

Jiangwei Liu et al.

Summary: The electrical properties and thermal stabilities of boron-doped diamond (B-diamond) MOS capacitor and MOS field-effect transistor (MOSFET) on a flat diamond epitaxial layer were investigated after annealing at 500 degrees C. The annealing process slightly increased the leakage current density of the B-diamond MOS capacitor. The drain-current and extrinsic transconductance maxima of the MOSFETs also showed improvements after annealing compared to the as-fabricated state. These results are significantly better than previously reported B-diamond MOSFETs.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

Add to Collection

Article Chemistry, Multidisciplinary

Influences of Ga Doping on Crystal Structure and Polarimetric Pattern of SHG in ZnO Nanofilms

Hua Long et al.

NANOMATERIALS (2019)

Add to Collection

Article Chemistry, Physical

Effect of boron doping concentration on structural optical electrical properties of nanostructured ZnO films

T. Hurma

JOURNAL OF MOLECULAR STRUCTURE (2019)

Add to Collection

Article Engineering, Electrical & Electronic

High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

Jiangwei Liu et al.

IEEE ELECTRON DEVICE LETTERS (2019)

Add to Collection

Article Chemistry, Multidisciplinary

P-N Junction Diode Using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices

Dae-Kyoung Kim et al.

ACS NANO (2019)

Add to Collection

Article Chemistry, Physical

Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

H. Meddeb et al.

APPLIED SURFACE SCIENCE (2015)

Add to Collection

Article Nanoscience & Nanotechnology

Europium doping induced symmetry deviation and its impact on the second harmonic generation of doped ZnO nanowires

Soumen Dhara et al.

NANOTECHNOLOGY (2014)

Add to Collection

Article Engineering, Electrical & Electronic

Ab initio study of boron segregation and deactivation at Si/SiO2 interface

Young Jun Oh et al.

MICROELECTRONIC ENGINEERING (2012)

Add to Collection

Proceedings Paper Energy & Fuels

Development and Integration of a High Efficiency Baseline Leading to 23% IBC Cells

M. Aleman et al.

PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012) (2012)

Add to Collection

Article Physics, Applied

Second harmonic generation probing of dopant type and density at the Si/SiO2 interface

Julie L. Fiore et al.

APPLIED PHYSICS LETTERS (2011)

Add to Collection

Article Physics, Applied

Photon energy threshold for filling boron induced charge traps in SiO2 near the Si/SiO2 interface using second harmonic generation

Heungman Park et al.

APPLIED PHYSICS LETTERS (2010)

Add to Collection

Article Physics, Applied

Ionization and shielding of interface states in native p+-Si/SiO2 probed by electric field induced second harmonic generation

T. Scheidt et al.

JOURNAL OF APPLIED PHYSICS (2008)

Add to Collection

Article Materials Science, Multidisciplinary

Charge-carrier dynamics and trap generation in native Si/SiO2 interfaces probed by optical second-harmonic generation -: art. no. 165314

T Scheidt et al.

PHYSICAL REVIEW B (2004)

Add to Collection

© Peeref 2019-2024. All rights reserved.