Journal
SURFACES AND INTERFACES
Volume 41, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.surfin.2023.103295
Keywords
Si-doped GaN; Plasma-enhanced atomic layer deposition; Contact resistance
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In this paper, Si derived from the SiNx sub-cycle in plasma-enhanced atomic layer deposition (PEALD) was used as a dopant to improve the ohmic contact resistance of GaN. The highest carrier concentration and lowest resistivity were achieved in a Si-doped GaN film deposited at a SiNx sub-cycle ratio of 20%.
Gallium Nitride (GaN) is becoming increasingly attractive due to its advantages in efficiency, switching speed, and high temperature operation. Although the performance of GaN in light-emitting devices and power electronics has been significantly improved, the need to reduce the power loss of GaN-based devices still exists. In this paper, Si derived from the SiNx sub-cycle in plasma-enhanced atomic layer deposition (PEALD) was used as a dopant to improve the ohmic contact resistance of GaN. The doping concentration of Si ranging from 0% to 33 at % were obtained by varying the SiNx sub-cycle ratio from 0% to 50%. A 13.56 at% Si-doped GaN film with moderate Si-N bonding deposited at a SiNx sub-cycle ratio of 20% exhibits the highest carrier concentration of 1.29 x 1018 cm-3 and the lowest resistivity of 0.78 & OHM;& BULL;cm. The transmission line model (TLM) measurements show that the as-deposited Si-doped GaN has a specific contact resistance of 4.77 x 101 & omega;& BULL;cm2, which decreases to 8.15 x 10-4 & omega;& BULL;cm2 after annealing at 500 & DEG;C.
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