Depth-Dependent Atomic-Scale Structural Changes in (Ag,Cu)(In,Ga)Se2 Absorbers Relevant for Thin-Film Solar Cells

Alloying a Cu(In,Ga)Se-2 (CIGS) solar cell absorber with silver to form (Ag,Cu)(In,Ga)Se-2 (ACIGS) is an effective route for improving the performance of CIGS-based thin-film solar cells by increasing the optical band gap and open-circuit voltage. While the role of Ag on the solar cell's performance and crystal structure has been analyzed, important gaps in our understanding remain, especially regarding the atomistic (short-range) structure. Previous X-ray absorption spectroscopy (XAS) results have shown that local atomic arrangements in Ag-free CIGS deviate from the long-range crystallographic structure deduced from X-ray diffraction (XRD). However, it is unclear how these structural deviations evolve with Ag alloying, particularly in the presence of Ga depth gradient. In this work, we employ angle-resolved XAS to probe the local environment of Se atoms within different depths of ACIGS absorbers with varying Ag content and Ga depth gradient. By complementing XAS results with X-ray diffraction measurements for long-range structures, glow discharge optical emission spectroscopy for elemental profiles, and scanning transmission electron microscopy for morphologies, changes in element-specific bond lengths, cell parameters, and anion displacement depending on compositions of Group [I] (Cu, Ag) and Group [III] (In, Ga) elements were mapped. The results suggest that the local atomic arrangement of the investigated ACIGS thin-film solar cell samples is depth-dependent and deviates from the long-range crystallographic structure. Possible reasons include tetragonal distortion or the presence of other phases or off-stoichiometry compounds. For the sample with the highest Ag content, increased bond lengths of Se-Group [I] atoms and Se-Ga are observed from the absorber bulk toward the near-absorber/buffer interface, whereas, in Ag-free CIGS, no significant changes are found. Results further indicate nonlinear anion displacement with Ag addition in the absorber bulk or with depth composition variation, which is likely to affect the electronic properties of solar cells. These findings offer a better understanding of the atomic-scale properties of ACIGS absorbers in actual thin-film solar cells containing in-depth composition variations.

Automated summary

Alloying CIGS solar cell absorber with silver can improve the performance of thin-film solar cells by increasing the optical band gap and open-circuit voltage. By using angle-resolved XAS and other measurement techniques, it is found that the local atomic arrangement of ACIGS absorbers with varying Ag content and Ga depth gradient deviates from the long-range crystallographic structure, which may affect the electronic properties of solar cells.