Journal
NATURE PHYSICS
Volume 13, Issue 1, Pages 21-25Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NPHYS3894
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Funding
- Netherlands Organization for Scientific Research (NOW/OCW), Frontiers of Nanoscience programme
- Vidi talent scheme
- Swiss National Science Foundation [200021-146995]
- EPSRC [EP/G007357/1] Funding Source: UKRI
- Swiss National Science Foundation (SNF) [200021_146995] Funding Source: Swiss National Science Foundation (SNF)
- Engineering and Physical Sciences Research Council [EP/G007357/1] Funding Source: researchfish
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It is widely believed that high-temperature superconductivity in the cuprates emerges from doped Mott insulators'. When extra carriers are inserted into the parent state, the electrons become mobile but the strong correlations from the Mott state are thought to survive inhomogeneous electronic order, a mysterious pseudogap and, eventually, superconductivity appear. How the insertion of dopant atoms drives this evolution is not known, nor is whether these phenomena are mere distractions specific to hole-doped cuprates or represent genuine physics of doped Mott insulators. Here we visualize the evolution of the electronic states of (Sr1-xLax)(2)IrO4, which is an effective spin-1/2 Mott insulator like the cuprates, but is chemically radically different(2,3). Using spectroscopic-imaging scanning tunnelling microscopy (SI-STM), we find that for a doping concentration of x approximate to 5%, an inhomogeneous, phase separated state emerges, with the nucleation of pseudogap puddles around clusters of dopant atoms. Within these puddles, we observe the same iconic electronic order that is seen in underdoped cupratesle(1,4-9). We investigate the genesis of this state and find evidence at low doping for deeply trapped carriers, leading to fully gapped spectra, which abruptly collapse at a threshold of x approximate to 4%. Our results clarify the melting of the Mott state, and establish phase separation and electronic order as generic features of doped Mott insulators.
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