Optimization of heterojunction back-contact (HBC) crystalline silicon solar cell based on Quokka simulation

For heterojunction back-contact (HBC) crystalline silicon (c-Si) solar cell based on n-type c-Si wafer, the effects of various wafer properties and geometric features of the solar cell back side on the solar cell current-voltage (I-V) performance were systematically studied by Quokka simulation, including the wafer thickness, resistivity and bulk lifetime, the emitter (P region) percentage on the surface, the total pitch of P and N regions, and the contact ratio of the transparent conductive oxide (TCO) film on the P or N region. The preferred values of such parameters for the HBC solar cell to get high efficiency were proposed. The emitter percentage is 80%, the total pitch of P and N is 1.6 mm, the wafer thickness is in the range of 90-120 mu m, the wafer resistivity is 0.5 Omega center dot cm-0.9 Omega center dot cm, the wafer bulk lifetime is not less than 4 ms, and as long as the cell is not short-circuited, the larger the contact ratio of the TCO, the higher the cell efficiency.

Automated summary

The effects of various wafer properties and geometric features on the performance of heterojunction back-contact (HBC) crystalline silicon (c-Si) solar cell based on n-type c-Si wafer were systematically studied using Quokka simulation. Preferred values of parameters for high efficiency of the HBC solar cell were proposed, including emitter percentage, total pitch of P and N regions, wafer thickness, wafer resistivity, wafer bulk lifetime, and contact ratio of the TCO film. Higher cell efficiency can be obtained with an emitter percentage of 80%, a total pitch of P and N regions of 1.6 mm, a wafer thickness in the range of 90-120 μm, a wafer resistivity of 0.5 Ω·cm-0.9 Ω·cm, a wafer bulk lifetime not less than 4 ms, and a larger contact ratio of the TCO.