Journal
NATURE NANOTECHNOLOGY
Volume 11, Issue 7, Pages 592-596Publisher
NATURE PORTFOLIO
DOI: 10.1038/NNANO.2016.42
Keywords
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Funding
- National Science Foundation Cooperative Agreement [DMR-1157490]
- State of Florida
- US Department of Energy
- NSF of China [11425415, 11421404, 11434010]
- National Basic Research Program of China (973 Program) [2013CB921902, 2012CB922002]
- Samsung Global Research Outreach (GRO) Program
- 'Strategic Priority Research Program' of the Chinese Academy of Sciences [XDB04040100]
- Ministry of Science and Technology of China [2015CB921000]
- Elemental Strategy Initiative
- JSPS [262480621, 25106006]
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The development of new, high-quality functional materials has been at the forefront of condensed-matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the materials base of two-dimensional electron systems (2DESs)(1-5). Here, we report the observation of the integer quantum Hall effect in a high-quality black phosphorus 2DES. The high quality is achieved by embedding the black phosphorus 2DES in a van der Waals heterostructure close to a graphite back gate(6,7); the graphite gate screens the impurity potential in the 2DES and brings the carrier Hall mobility up to 6,000 cm(2) V-1 s(-1). The exceptional mobility enabled us to observe the quantum Hall effect and to gain important information on the energetics of the spin-split Landau levels in black phosphorus. Our results set the stage for further study on quantum transport and device application in the ultrahigh mobility regime.
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