Journal
NATURE NANOTECHNOLOGY
Volume 12, Issue 1, Pages 21-25Publisher
NATURE RESEARCH
DOI: 10.1038/NNANO.2016.171
Keywords
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Funding
- NSF of China [11425415, 11421404, 11534010]
- National Basic Research Program of China (973 Program) [2013CB921902, 2012CB922002]
- National Science Foundation EFRI program [EFMA-1542741]
- Samsung Global Research Outreach (GRO) Program
- 'Strategic Priority Research Program' of the Chinese Academy of Sciences [XDB04040100]
- Elemental Strategy Initiative conducted by the MEXT, Japan
- JSPS [262480621, 25106006]
- Theory of Materials Program at the Lawrence Berkeley National Laboratory through the Office of Basic Energy Sciences, US Department of Energy [DE-AC02-05CH11231]
- National Science Foundation [DMR-1508412, ACI-1053575]
- NSF Graduate Research Fellowship [DGE 1106400]
- Office of Science of the US Department of Energy
- Extreme Science and Engineering Discovery Environment (XSEDE)
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1508412] Funding Source: National Science Foundation
- Directorate For Engineering [1542741] Funding Source: National Science Foundation
- Emerging Frontiers & Multidisciplinary Activities [1542741] Funding Source: National Science Foundation
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Phosphorene, a single atomic layer of black phosphorus, has recently emerged as a new two-dimensional (2D) material that holds promise for electronic and photonic technologies(1-5). Here we experimentally demonstrate that the electronic structure of few-layer phosphorene varies significantly with the number of layers, in good agreement with theoretical predictions. The interband optical transitions cover a wide, technologically important spectral range from the visible to the mid-infrared. In addition, we observe strong photoluminescence in few-layer phosphorene at energies that closely match the absorption edge, indicating that they are direct bandgap semiconductors. The strongly layer-dependent electronic structure of phosphorene, in combination with its high electrical mobility, gives it distinct advantages over other 2D materials in electronic and opto-electronic applications.
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