4.8 Article

Helical edge states and fractional quantum Hall effect in a graphene electron-hole bilayer

Journal

NATURE NANOTECHNOLOGY
Volume 12, Issue 2, Pages 118-122

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/NNANO.2016.214

Keywords

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Funding

  1. National Science Foundation (NSF) [DMR-1405221, DMR-0819762, ECS-0335765, DMR-1157490]
  2. National Science Scholarship Program, Singapore
  3. Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4541]
  4. Gordon and Betty Moore Foundation [GBMF2931]
  5. Science and Technology Center for Integrated Quantum Materials, NSF Grant [DMR-1231319]
  6. State of Florida
  7. Division Of Materials Research
  8. Direct For Mathematical & Physical Scien [1405221] Funding Source: National Science Foundation

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Helical 1D electronic systems are a promising route towards realizing circuits of topological quantum states that exhibit non-Abelian statistics(1-4). Here, we demonstrate a versatile platform to realize 1D systems made by combining quantum Hall (QH) edge states of opposite chiralities in a graphene electron hole bilayer at moderate magnetic fields. Using this approach, we engineer helical 1D edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong non-local transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Unlike other approaches used for realizing helical states(3-7), the graphene electron-hole bilayer can be used to build new 1D systems incorporating fractional edge states(8,9). Indeed, we are able to tune the bilayer devices into a regime hosting fractional and integer edge states of opposite chiralities, paving the way towards 1D helical conductors with fractional quantum statistics(10-13).

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