Journal
NATURE NANOTECHNOLOGY
Volume 11, Issue 4, Pages 352-359Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NNANO.2015.294
Keywords
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Funding
- DARPA Meso program [N66001-12-1-4034, N66001-11-1-4105]
- Spins and Heat in Nanoscale Electronic Systems (SHINES)
- Energy Frontier Research Center - US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) [DE-SC0012670]
- US Army Research Office [W911NF-14-1-0607, W911NF-15-1-0561]
- National 973 Program of China [2013CB934600]
- National Science Foundation of China [11174244, 51390474]
- Zhejiang Provincial Natural Science Foundation of China [LR12A04002]
- FAME Center, one of six centers of STARnet, a Semiconductor Research Corporation program - MARCO
- DARPA
- Directorate For Engineering
- Emerging Frontiers & Multidisciplinary Activities [1433541] Funding Source: National Science Foundation
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Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.
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