4.8 Article

A dressed spin qubit in silicon

Journal

NATURE NANOTECHNOLOGY
Volume 12, Issue 1, Pages 61-66

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/NNANO.2016.178

Keywords

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Funding

  1. Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology [CE110001027]
  2. US Army Research Office [W911NF-13-1-0024]
  3. Australian National Fabrication Facility
  4. laboratory of R. Elliman at the Australian National University
  5. Japanese Society for the Promotion of Science JSPS KAKEN
  6. Core-to-Core Program

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Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties-a different and easily tunable level splitting, faster control and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and assess its potential as a quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, frequency modulation of the driving field or a simple detuning pulse. We measure coherence times of T-2 rho(star) = 2.4 ms and T-2 rho(Hahn) = 9ms, one order of magnitude longer than those of the undressed spin. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.

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