Journal
NATURE MATERIALS
Volume 15, Issue 6, Pages 628-+Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NMAT4626
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- Dutch Polymer Institute (DPI) [733]
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In 1962, Mark and Helfrich demonstrated that the current in a semiconductor containing traps is reduced by N/N-t(r), with N the amount of transport sites, N-t the amount of traps and r a number that depends on the trap energy distribution. For r > 1, the possibility opens that trapping effects can be nearly eliminated when N and Nt are simultaneously reduced. Solution-processed conjugated polymers are an excellent model system to test this hypothesis, because they can be easily diluted by blending them with a high-bandgap semiconductor. We demonstrate that in conjugated polymer blends with 10% active semiconductor and 90% high-bandgap host, the typical strong electron trapping can be effectively eliminated. As a result we were able to fabricate polymer light-emitting diodes with balanced electron and hole transport and reduced non-radiative trap-assisted recombination, leading to a doubling of their efficiency at nearly ten times lower material costs.
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