Journal
NATURE MATERIALS
Volume 16, Issue 4, Pages 474-+Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NMAT4818
Keywords
-
Categories
Funding
- Department of the Navy, Office of Naval Research [N00014-14-1-0580, N00014-16-1-2520]
- MURI Center CAOP, Office of Naval Research Award [N00014-04-1-0313]
- Department of Energy through the Bay Area Photovoltaic Consortium [DE-EE0004946]
- University of Cologne, Germany
- Grants-in-Aid for Scientific Research [15H06470] Funding Source: KAKEN
Ask authors/readers for more resources
Solution-based electrical doping protocols may allow more versatility in the design of organic electronic devices; yet, controlling the diffusion of dopants in organic semiconductors and their stability has proven challenging. Here we present a solution-based approach for electrical p-doping of films of donor conjugated organic semiconductors and their blends with acceptors over a limited depth with a decay constant of 10-20nm by post-process immersion into a polyoxometalate solution (phosphomolybdic acid, PMA) in nitromethane. PMA-doped films show increased electrical conductivity and work function, reduced solubility in the processing solvent, and improved photo-oxidative stability in air. This approach is applicable to a variety of organic semiconductors used in photovoltaics and field-effect transistors. PMA doping over a limited depth of bulk heterojunction polymeric films, in which amine-containing polymers were mixed in the solution used for film formation, enables single-layer organic photovoltaic devices, processed at room temperature, with power conversion efficiencies up to 5.9 +/- 0.2% and stable performance on shelf-lifetime studies at 60 degrees C for at least 280 h.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available