Using orbital sensitivity analysis to pinpoint the role of orbital interactions in thermoelectric power factor

The modification of the electronic band structure is of critical importance for thermoelectric materials whose heat to electricity power generation is related to carrier effective mass and alignment of semiconductor band edges. One approach to optimize the electronic band structure is by modification of orbital interactions through doping or alloying. While the current ab-initio quantum chemical calculations can help us to investigate orbital components of electronic bands, they reveal little information on the relative tunability of electronic states and transport properties with respect to orbital interactions. In this work, we present a method, based on a symmetry-adapted tight-binding model and sensitivity analysis, that can pinpoint the role of orbital interactions in determining electronic band structure and transport properties. As an application, a systematic theoretical analysis is used to show how the power factor of PbTe can/cannot be improved by playing with interatomic orbital interactions. The orbital interaction sensitivity analysis introduced in this work can easily be applied to other compounds or properties.

Automated summary

The modification of orbital interactions can optimize the electronic band structure and improve the thermoelectric efficiency of materials. A method based on a symmetry-adapted tight-binding model and sensitivity analysis is introduced to determine the role of orbital interactions in electronic band structure and transport properties. The theoretical analysis on PbTe demonstrates the potential to improve the power factor by manipulating interatomic orbital interactions.