Energy Distribution of Sputtered Atoms Explored by SRIM Simulations

The energy of the sputtered atoms is important to control the microstructure and physical properties of thin films. In this work, we used the SRIM program to simulate the energy of sputtered atoms. We analyzed the energy distribution functions (EDFs) and the average energies of the atoms in different spatial directions for a range of target materials and Ar ion energies. The results were compared to the analytical equations for EDFs derived by Sigmund and Thompson and with experimental data from the literature. The SRIM simulations give realistic EDFs for transition metals, but not for elements lighter than Si. All EDFs show a low-energy peak positioned close to one-half of the surface binding energy and a high-energy tail decreasing as approximately E 2. We analyzed the characteristics of EDFs, specifically, the position of low- and high-energy peaks, FWHM, and the energy tail, with respect to the ion energy and position of the element in the periodic table. The low-energy peak increases with atomic number for elements within each group in the periodic table. Similar changes were observed for FWHM. For the period 5 and 6 elements, additional broad high-energy peaks were observed at emission angles above 45ffi when sputtered by Ar ions with 300 eV and also in some heavier elements when bombarded by 600 eV and 1200 eV ions. The transition metals in groups 4, 5, and 6 in periods 5 and 6 have the highest average energies, while the lowest average energies have elements in group 11. The results of simulations show that the average energies of sputtered atoms were inversely proportional to the sputtering yield, i.e., the higher the sputtering yield, the lower the average energy of sputtered atoms. We established an empirical equation for transition metals to estimate the average energy of sputtered atoms from the sputtering yield. The angular distribution of the average atom energy depends on the atomic number. Transition metals with 22 < Z < 72 have an anisotropic energy distribution, with the highest average energies in the 40 degrees -70 degrees range. For the elements in group 11, the angular distribution of the average energies is more isotropic.

Automated summary

In this study, the authors used the SRIM program to simulate the energy of sputtered atoms and analyzed the energy distribution functions (EDFs) and average energies of the atoms in different directions for various target materials and Ar ion energies. The results showed that the SRIM simulations gave realistic EDFs for transition metals but not for lighter elements than Si. All EDFs exhibited a low-energy peak close to half of the surface binding energy and a high-energy tail decreasing as approximately E^2. Overall, the study provides insights into controlling the microstructure and physical properties of thin films through the energy of sputtered atoms.